MGD623S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGD623S  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO3P

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MGD623S datasheet

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 mgd623s.pdf pdf_icon

MGD623S

IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit

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 mgd623n.pdf pdf_icon

MGD623S

IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit

 9.1. Size:458K  1
 mgd622.pdf pdf_icon

MGD623S

600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features Package Low Saturation Voltage TO3P-3L High Speed Switching With Integrated Low VF Fast Recovery Diode (4) RoHS Compliant C VCE ------------------------------------------------------ 600 V IC-------------------------------------------20 A (TC = 100 C) VCE(sat)--------------------------

Otros transistores... TIG062E8, TIG064E8, TIG065E8, TIG066SS, DGG4015, FGM622S, FGM623S, MGD623N, G50T65D, FGW50N65WE, SKW030N065, GM200HB12CT, GM400HB06CT, KGH15N120NDA, KGH25N120NDA, KGT12N120NDH, KGT15N120KDA