KGT30N120NDA Todos los transistores

 

KGT30N120NDA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KGT30N120NDA
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO3PN

 Búsqueda de reemplazo de KGT30N120NDA - IGBT

 

KGT30N120NDA Datasheet (PDF)

 ..1. Size:584K  kec
kgt30n120nda.pdf pdf_icon

KGT30N120NDA

SEMICONDUCTOR KGT30N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS general inverters, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed switching _ E 3.

 3.1. Size:584K  kec
kgt30n120ndh.pdf pdf_icon

KGT30N120NDA

SEMICONDUCTOR KGT30N120NDH TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

 7.1. Size:1596K  kec
kgt30n135ndh.pdf pdf_icon

KGT30N120NDA

SEMICONDUCTOR KGT30N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 7.2. Size:514K  kec
kgt30n135kdh.pdf pdf_icon

KGT30N120NDA

SEMICONDUCTOR KGT30N135KDH TECHNICAL DATA General Description B KEC NPT IGBTs offer low switching losses, high energy efficiency A O S K and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. DIM MILLIMETERS _ + A 15.90 0.30 FEATURES _ B 5.00 + 0.20 High speed switching _ C 20.85 + 0.30 _ D 3.00 + 0.20 High r

Otros transistores... KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , G50T65D , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR .

 

 
Back to Top

 


 
.