APT11GF120KR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT11GF120KR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 125
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 22
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 45
Capacitancia de salida (Cc), typ, pF: 70
Carga total de la puerta (Qg), typ, nC: 55
Paquete / Cubierta: TO220
Búsqueda de reemplazo de APT11GF120KR - IGBT
APT11GF120KR Datasheet (PDF)
apt11gf120kr.pdf
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APT11GF120KR1200V 22AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt11gf120krg.pdf
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TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDTO-220The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fa
apt11gf120brd.pdf
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APT11GF120BRD1200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur
apt11gf120brd1.pdf
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APT11GF120BRD11200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCEC Low Tail Cu
apt11gf120brdq1g.pdf
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TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and f
Otros transistores... APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 , APT100GT120JU2 , APT100GT120JU3 , APT11GF120BRD1 , IRG7R313U , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K .
![APT11GF120KR](https://alltransistors.com/images/us.png)
![APT11GF120KR](https://alltransistors.com/images/es.png)
![APT11GF120KR](https://alltransistors.com/images/ru.png)
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