GT8G103LB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT8G103LB datasheet

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gt8g103.pdf pdf_icon

GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V (B) DC VGES 6 V Gate-

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gt8g101.pdf pdf_icon

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gt8g151.pdf pdf_icon

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit mm Unit mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current IC = 150 A (max) 0.65 0.05 0.65 0.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =

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gt8g121.pdf pdf_icon

GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit mm STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V DC VGES 6 V G

Otros transistores... GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , RJH60F7BDPQ-A0 , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS .