GT15J301 Todos los transistores

 

GT15J301 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GT15J301
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 35 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: 2-10R1C
     - Selección de transistores por parámetros

 

GT15J301 Datasheet (PDF)

 ..1. Size:512K  toshiba
 gt15j301.pdf pdf_icon

GT15J301

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

 8.1. Size:214K  toshiba
 gt15j321.pdf pdf_icon

GT15J301

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed: tf = 0.03 s (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu

 9.1. Size:307K  toshiba
 gt15j101.pdf pdf_icon

GT15J301

 9.2. Size:295K  toshiba
 gt15j103.pdf pdf_icon

GT15J301

MOSTRAR MÁS

Otros transistores... GT45G128 , GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , MBQ50T65FESC , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 .

History: RJH60F7ADPK | TGH30N120FD | APT15GT120BRG | HGTG30N60C3D | IXBH9N160 | GPU150HF120D2 | IRG4PH30K

 

 
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