GT40J322 Todos los transistores

 

GT40J322 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT40J322

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 120 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

Encapsulados: 2-16C1C

 Búsqueda de reemplazo de GT40J322 IGBT

- Selección ⓘ de transistores por parámetros

 

GT40J322 datasheet

 ..1. Size:332K  toshiba
 gt40j322.pdf pdf_icon

GT40J322

GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application Unit mm FRD included between emitter and collector Enhancement mode type High-speed IGBT tf = 0.20 s (typ.) (IC = 40 A) Low saturation voltage VCE (sat) = 1.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25 C) Charac

 7.1. Size:251K  toshiba
 gt40j325.pdf pdf_icon

GT40J322

GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 GT40J325 GT40J325 GT40J325 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. Featur

 7.2. Size:372K  toshiba
 gt40j321.pdf pdf_icon

GT40J322

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application Unit mm FRD included between emitter and collector Enhancement mode type High-speed IGBT tf = 0.11 s (typ.) (IC = 40 A) Low saturation voltage VCE (sat) = 2.0 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25 C) Charac

 9.1. Size:217K  toshiba
 gt40j121.pdf pdf_icon

GT40J322

GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 GT40J121 GT40J121 GT40J121 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. Featur

MOSTRAR MÁS

Otros transistores... GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 , XNF15N60T , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN .

History: APT50GN120B2G | TSG60N100CE | APT80GA90LD40 | STGFW30V60DF | APT75GN120J | VS-GA100TS120UPBF | APT50GF120B2R

 

 

 

 

↑ Back to Top
.