GT60J323H Todos los transistores

 

GT60J323H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GT60J323H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 170 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: TO3P
 

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GT60J323H Datasheet (PDF)

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GT60J323H

GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Unit: mmInduction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed : tf = 0.12 s (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emit

 6.1. Size:175K  toshiba
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GT60J323H

GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : tf = 0.16 s (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba

 9.2. Size:39K  apt
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GT60J323H

APT60GT60JR600V 90AThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 150KHzC Low Tail Current Ultra Low Leakage Current Avalanche

Otros transistores... GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , IRG4PC40W , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR .

 

 
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