APT30GF60JU2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30GF60JU2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 192 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 58 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT30GF60JU2 - IGBT
APT30GF60JU2 Datasheet (PDF)
apt30gf60ju2.pdf
APT30GF60JU2ISOTOP Boost chopper VCES = 600V IC = 30A @ Tc = 100CNPT IGBT KApplication AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop- Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -
apt30gf60ju3.pdf
APT30GF60JU3ISOTOP Buck chopper VCES = 600V IC = 30A @ Tc = 100CNPT IGBT CApplication AC and DC motor control Switched Mode Power Supplies GFeatures Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop- Low tail current E- Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanch
apt30gn60bg.pdf
TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
apt30gn60bdq2g.pdf
TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib
apt30gt60cr.pdf
APT30GT60CR600V 30AThunderbolt IGBTTO-254TO-254The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed. Low Forward Voltage Drop High Freq. Switching to 150KHzCC Low Tail Current Ultra Low Leakage CurrentEG Avalanche R
apt30gp60b.pdf
APT30GP60B600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alter
apt30gt60krg.pdf
TYPICAL PERFORMANCE CURVES APT30GT60KR(G) 600V APT30GT60KRAPT30GT60KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTTO-220The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High
apt30gt60ar.pdf
APT30GT60AR600V 40AThunderbolt IGBTTO-3The Thunderbolt IGBT is a new generation of high voltage power IGBTs.(TO-204AE)Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed. Low Forward Voltage Drop High Freq. Switching to 150KHzC Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt30gp60bdf1.pdf
TYPICAL PERFORMANCE CURVESAPT30GP60BDF1APT30GP60BDF1600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, the
apt30gt60kr.pdf
APT30GT60KR600V 58AThunderbolt IGBTTO-220The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.GC Low Forward Voltage Drop High Freq. Switching to 150KHz EC Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt30gp60jdf1.pdf
TYPICAL PERFORMANCE CURVESAPT30GP60JDF1APT30GP60JDF1600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, the"UL Recog
apt30gt60brd.pdf
APT30GT60BRD600V 55AThunderbolt IGBT & FREDThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. TO-247Using Non-Punch Through Technology the Thunderbolt IGBT combinedwith an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offerssuperior ruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHz
apt30gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
apt30gn60sg apt30gp60bg.pdf
APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr
apt30gt60brg.pdf
TYPICAL PERFORMANCE CURVES APT30GT60BR(G) 600V APT30GT60BR APT30GT60BRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Drop Hig
apt30gt60br.pdf
APT30GT60BR600V 58AThunderbolt IGBTTO-247The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt30gt60brdq2g.pdf
TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Dro
apt30gp60bsc.pdf
TYPICAL PREFORMANCE CURVES APT30GP60BSCAPT30GP60BSC600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, theC
apt30gs60srdq2g.pdf
APT30GS60BRDQ2(G)APT30GS60SRDQ2(G)600V, 30A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
apt30gs60brdq2g.pdf
APT30GS60BRDQ2(G)APT30GS60SRDQ2(G)600V, 30A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
apt30gn60kg.pdf
TYPICAL PERFORMANCE CURVESAPT30GN60K(G) 600V APT30GN60KAPT30GN60KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a
apt30gt60brdlg.pdf
TYPICAL PERFORMANCE CURVES APT30GT60BRDL(G) 600VAPT30GT60BRDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.Typical Applicatio
Otros transistores... APT20GT60KR , APT25GN120B , APT25GP120B , APT25GP120BDF1 , APT25GP90B , APT25GP90BDF1 , APT26GU30B , APT26GU30K , IKW75N60T , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC , APT30GP60JDF1 , APT30GT60AR , APT30GT60BR , APT30GT60BRD .
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