APT30GP60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30GP60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 463 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 295 pF
Paquete / Cubierta: TO247
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APT30GP60B Datasheet (PDF)
apt30gp60b.pdf
APT30GP60B600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alter
apt30gp60bdf1.pdf
TYPICAL PERFORMANCE CURVESAPT30GP60BDF1APT30GP60BDF1600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, the
apt30gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
apt30gn60sg apt30gp60bg.pdf
APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr
apt30gp60bsc.pdf
TYPICAL PREFORMANCE CURVES APT30GP60BSCAPT30GP60BSC600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, theC
Otros transistores... APT25GP120B , APT25GP120BDF1 , APT25GP90B , APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , IRG7IC28U , APT30GP60BDF1 , APT30GP60BSC , APT30GP60JDF1 , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR .
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