APT40GT60BR Todos los transistores

 

APT40GT60BR IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT40GT60BR

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: TO247

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APT40GT60BR datasheet

 ..1. Size:24K  apt
apt40gt60br.pdf pdf_icon

APT40GT60BR

APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated

 0.1. Size:188K  microsemi
apt40gt60brg.pdf pdf_icon

APT40GT60BR

APT40GT60BR 600V, 80A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop High Frequency Switching to 150KHz Low Tail Current G

 8.1. Size:170K  apt
apt40gp90j.pdf pdf_icon

APT40GT60BR

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdf pdf_icon

APT40GT60BR

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k

Otros transistores... APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , IKW50N60H3 , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR .

History: APT150GN60J | APT40GP90B | APT40GP60J

 

 

 


History: APT150GN60J | APT40GP90B | APT40GP60J

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