APT45GP120B Todos los transistores

 

APT45GP120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT45GP120B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

APT45GP120B Datasheet (PDF)

 ..1. Size:88K  apt
apt45gp120b.pdf pdf_icon

APT45GP120B

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

 0.1. Size:436K  apt
apt45gp120b2dq2g.pdf pdf_icon

APT45GP120B

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 0.2. Size:196K  apt
apt45gp120b2df2.pdf pdf_icon

APT45GP120B

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

 0.3. Size:102K  apt
apt45gp120bg.pdf pdf_icon

APT45GP120B

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

Otros transistores... APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , CRG60T60AK3HD , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR .

History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA

 

 
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History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA

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