APT45GP120JDF2 Todos los transistores

 

APT45GP120JDF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT45GP120JDF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 329 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃

trⓘ - Tiempo de subida, typ: 29 nS

Coesⓘ - Capacitancia de salida, typ: 300 pF

Encapsulados: SOT227

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APT45GP120JDF2 datasheet

 ..1. Size:205K  apt
 apt45gp120jdf2.pdf pdf_icon

APT45GP120JDF2

TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss

 2.1. Size:457K  apt
 apt45gp120jdq220.pdf pdf_icon

APT45GP120JDF2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 2.2. Size:457K  apt
 apt45gp120jdq2.pdf pdf_icon

APT45GP120JDF2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 3.1. Size:97K  apt
 apt45gp120j.pdf pdf_icon

APT45GP120JDF2

APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

MOSTRAR MÁS

Otros transistores... APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , RJH60F7BDPQ-A0 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 .

History: APT100GT120JR | APT60GT60JRDQ3 | APT100GT60JRDL | APT40GP60J | APT40GT60BR | AP50GT60SW-HF

 

 

 

 

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