APT50GF120JRD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50GF120JRD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 460 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 160 nS
Coesⓘ - Capacitancia de salida, typ: 650 pF
Qgⓘ - Carga total de la puerta, typ: 525 nC
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT50GF120JRD - IGBT
APT50GF120JRD Datasheet (PDF)
apt50gf120jrd.pdf
APT50GF120JRD1200V 75AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L
apt50gf120jrdq3.pdf
TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa
apt50gf120hr.pdf
APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt50gf120b2r.pdf
APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E
apt50gf120b2rg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
apt50gf120lrg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
Otros transistores... APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , IKW50N60T , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B , APT50GP60B2DF2 .
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