APT50GF60B2RD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50GF60B2RD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
trⓘ - Tiempo de subida, typ: 100 nS
Coesⓘ - Capacitancia de salida, typ: 475 pF
Encapsulados: TMAX
Búsqueda de reemplazo de APT50GF60B2RD IGBT
- Selección ⓘ de transistores por parámetros
APT50GF60B2RD datasheet
apt50gf60b2rd apt50gf60lrd.pdf
APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop
apt50gf60b2rd.pdf
APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop
apt50gf60br.pdf
APT50GF60BR APT50GF60BR 600V 75A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. C Low Forward Voltage Drop High Freq. Switching to 20KHz G C G Low Tail Current Ultra Low Leakage Current E Avalan
apt50gf60ar.pdf
APT50GF60AR 600V 55A Fast IGBT TO-3 The Fast IGBT is a new generation of high voltage power IGBTs. Using (TO-204AE) Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C Low Tail Current Ultra Low Leakage Current Avalanche Rated
Otros transistores... APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , CRG75T60AK3HD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B , APT50GP60B2DF2 , APT50GP60J .
History: APT45GP120BG | APT50GN120L2DQ2G
History: APT45GP120BG | APT50GN120L2DQ2G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640 | 2sb527







