APT75GT120JU3 Datasheet. Equivalente

 ..1. Size:606K  apt
 apt75gt120ju3.pdf

APT75GT120JU3 ISOTOP Buck chopper VCES = 1200V IC = 75A @ Tc = 80 C Trench IGBT Application C AC and DC motor control Switched Mode Power Supplies G Features Trench + Field Stop IGBT Technology - Low voltage drop E - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

 2.1. Size:606K  apt
 apt75gt120ju2.pdf

APT75GT120JU2 ISOTOP Boost chopper VCES = 1200V IC = 75A @ Tc = 80 C Trench IGBT Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch C Features Trench + Field Stop IGBT Technology G - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

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 apt75gt120jrdq3.pdf

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 apt75gn120b2g.pdf

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

 8.2. Size:453K  apt
 apt75gp120jdq3.pdf

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 8.3. Size:436K  apt
 apt75gn60ldq3g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parameter

 8.4. Size:399K  apt
 apt75gn60bg.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 8.5. Size:33K  apt
 apt75gp120j.pdf

APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. C Low Conduction Loss RBSOA rated Low Gate Charge G

 8.6. Size:94K  apt
 apt75gp120b2.pdf

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 8.7. Size:82K  apt
 apt75gn120lg.pdf

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

 8.8. Size:96K  apt
 apt75gp120b2g.pdf

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 8.9. Size:420K  apt
 apt75gn120j.pdf

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 8.10. Size:203K  apt
 apt75gp120jdf3.pdf

 8.11. Size:331K  apt
 apt75gn120jdq3.pdf

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

 8.12. Size:212K  microsemi
 apt75gn60bdq2g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result

 8.13. Size:212K  microsemi
 apt75gn60sdq2g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result