HGT1S12N60C3D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S12N60C3D  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Encapsulados: TO262

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HGT1S12N60C3D datasheet

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HGT1S12N60C3D

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HGT1S12N60C3D

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The

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HGT1S12N60C3D

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HGT1S12N60C3D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSTRAR MÁS

Otros transistores... HGT1S11N120CNS, HGT1S12N60A4DS, HGT1S12N60A4S, HGT1S12N60B3, HGT1S12N60B3D, HGT1S12N60B3DS, HGT1S12N60B3S, HGT1S12N60C3, GT30G122, HGT1S12N60C3DR, HGT1S12N60C3DRS, HGT1S12N60C3DS, HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS, HGT1S12N60C3S, HGT1S12N60C3S9A