HGT1S12N60C3RS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S12N60C3RS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 37 nS

Encapsulados: TO263

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HGT1S12N60C3RS datasheet

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HGT1S12N60C3RS

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HGT1S12N60C3RS

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HGT1S12N60C3RS

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

MOSTRAR MÁS

Otros transistores... HGT1S12N60B3S, HGT1S12N60C3, HGT1S12N60C3D, HGT1S12N60C3DR, HGT1S12N60C3DRS, HGT1S12N60C3DS, HGTP12N60C3R, HGT1S12N60C3R, GT60N321, HGT1S12N60C3S, HGT1S12N60C3S9A, HGT1S1N120BNDS9A, HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLS9A, HGT1S1N120BNDS, HGT1S1N120CNDS