HGT1S12N60C3RS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1S12N60C3RS
Tipo de transistor: IGBT
Código de marcado: 12N60C3R
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 37 nS
Qgⓘ - Carga total de la puerta, typ: 50 nC
Paquete / Cubierta: TO263
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HGT1S12N60C3RS Datasheet (PDF)
hgt1s12n60c3s9a.pdf
HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
hgtp12n60c3 hgt1s12n60c3.pdf
HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
hgtp12n60c3d hgt1s12n60c3d.pdf
HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
hgtp12n60c3d hgt1s12n60c3ds.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... HGT1S12N60B3S , HGT1S12N60C3 , HGT1S12N60C3D , HGT1S12N60C3DR , HGT1S12N60C3DRS , HGT1S12N60C3DS , HGTP12N60C3R , HGT1S12N60C3R , IKW40T120 , HGT1S12N60C3S , HGT1S12N60C3S9A , HGT1S1N120BNDS9A , HGT1S14N36G3VL , HGT1S14N36G3VLS , HGT1S14N36G3VLS9A , HGT1S1N120BNDS , HGT1S1N120CNDS .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2