HGT1S12N60C3S Todos los transistores

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HGT1S12N60C3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S12N60C3S

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 104W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 24A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 14

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO263AB

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HGT1S12N60C3S Datasheet (PDF)

1.1. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGT1S12N60C3S
HGT1S12N60C3S

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

1.2. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGT1S12N60C3S
HGT1S12N60C3S

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

1.3. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGT1S12N60C3S
HGT1S12N60C3S

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

1.4. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGT1S12N60C3S
HGT1S12N60C3S

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

Otros transistores... HGT1S12N60C3 , HGT1S12N60C3D , HGT1S12N60C3DR , HGT1S12N60C3DRS , HGT1S12N60C3DS , HGT1S12N60C3DS9A , HGT1S12N60C3R , HGT1S12N60C3RS , G20N60B3 , HGT1S12N60C3S9A , HGT1S12N60C3SA , HGT1S14N36G3VL , HGT1S14N36G3VLS , HGT1S14N36G3VLS9A , HGT1S1N120BNDS , HGT1S1N120CNDS , HGT1S20N35G3VL .

 


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