FGW15N120H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGW15N120H  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 155 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 50 pF

Encapsulados: TO247

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FGW15N120H datasheet

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FGW15N120H

http //www.fujielectric.com/products/semiconductor/ FGW15N120H Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abs

 0.1. Size:556K  fuji
 fgw15n120hd.pdf pdf_icon

FGW15N120H

http //www.fujielectric.com/products/semiconductor/ FGW15N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Ab

 5.1. Size:579K  fuji
 fgw15n120vd.pdf pdf_icon

FGW15N120H

http //www.fujielectric.com/products/semiconductor/ FGW15N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circu

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