FGW40N120H Todos los transistores

 

FGW40N120H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW40N120H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 340 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

FGW40N120H Datasheet (PDF)

 ..1. Size:507K  fuji
 fgw40n120h.pdf pdf_icon

FGW40N120H

http://www.fujielectric.com/products/semiconductor/FGW40N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs

 0.1. Size:590K  fuji
 fgw40n120hd.pdf pdf_icon

FGW40N120H

http://www.fujielectric.com/products/semiconductor/FGW40N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab

 5.1. Size:714K  fuji
 fgw40n120wd.pdf pdf_icon

FGW40N120H

http://www.fujielectric.com/products/semiconductor/FGW40N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu

 5.2. Size:574K  fuji
 fgw40n120w.pdf pdf_icon

FGW40N120H

http://www.fujielectric.com/products/semiconductor/FGW40N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut

MOSTRAR MÁS

Otros transistores... APTLGF140U120T , APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , FGW15N120VD , MBQ50T65FESC , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H .

History: SMC7G10US60 | APT35GT120JU2 | APT25GP120B | AUIRGP65G40D0 | SKM400GA124D | MG06200S-BN4MM

 

 
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