FGW40N120HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGW40N120HD
Tipo de transistor: IGBT + Diode
Código de marcado: 40G120HD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 340 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Qgⓘ - Carga total de la puerta, typ: 300 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGW40N120HD Datasheet (PDF)
fgw40n120hd.pdf

http://www.fujielectric.com/products/semiconductor/FGW40N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
fgw40n120h.pdf

http://www.fujielectric.com/products/semiconductor/FGW40N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
fgw40n120wd.pdf

http://www.fujielectric.com/products/semiconductor/FGW40N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu
fgw40n120w.pdf

http://www.fujielectric.com/products/semiconductor/FGW40N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut
Otros transistores... APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , IXRH40N120 , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD .
History: SIGC04T60G | TSG25N120CN | IXA60IF1200NA | IXGK60N60B2D1 | APT15GP90K | IRGB4086 | IXBF12N300
History: SIGC04T60G | TSG25N120CN | IXA60IF1200NA | IXGK60N60B2D1 | APT15GP90K | IRGB4086 | IXBF12N300



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