FGW40N120W Todos los transistores

 

FGW40N120W - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW40N120W
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 54 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

FGW40N120W Datasheet (PDF)

 ..1. Size:574K  fuji
 fgw40n120w.pdf pdf_icon

FGW40N120W

http://www.fujielectric.com/products/semiconductor/FGW40N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut

 0.1. Size:714K  fuji
 fgw40n120wd.pdf pdf_icon

FGW40N120W

http://www.fujielectric.com/products/semiconductor/FGW40N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu

 5.1. Size:507K  fuji
 fgw40n120h.pdf pdf_icon

FGW40N120W

http://www.fujielectric.com/products/semiconductor/FGW40N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs

 5.2. Size:597K  fuji
 fgw40n120vd.pdf pdf_icon

FGW40N120W

http://www.fujielectric.com/products/semiconductor/FGW40N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu

MOSTRAR MÁS

Otros transistores... APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , FGW40N120VD , FGH30S130P , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H .

History: IXGP12N100 | AUIRGS4062D1 | SGM50PA12A6BTFD

 

 
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