FGW25N120VD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGW25N120VD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 48 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO247

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FGW25N120VD datasheet

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 fgw25n120vd.pdf pdf_icon

FGW25N120VD

http //www.fujielectric.com/products/semiconductor/ FGW25N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 25A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circu

 5.1. Size:712K  fuji
 fgw25n120wd.pdf pdf_icon

FGW25N120VD

http //www.fujielectric.com/products/semiconductor/ FGW25N120WD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 25A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Equivalent circuit Absolu

 5.2. Size:574K  fuji
 fgw25n120w.pdf pdf_icon

FGW25N120VD

http //www.fujielectric.com/products/semiconductor/ FGW25N120W Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 25A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Equivalent circuit Absolut

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