FGW25N120W - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGW25N120W
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 220 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 75 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGW25N120W - IGBT
FGW25N120W Datasheet (PDF)
fgw25n120w.pdf
http://www.fujielectric.com/products/semiconductor/FGW25N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 25AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut
fgw25n120wd.pdf
http://www.fujielectric.com/products/semiconductor/FGW25N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 25AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu
fgw25n120vd.pdf
http://www.fujielectric.com/products/semiconductor/FGW25N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 25AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu
Otros transistores... FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , IRGB20B60PD1 , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2