FGW30N120H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGW30N120H  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 28 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO247

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FGW30N120H datasheet

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FGW30N120H

http //www.fujielectric.com/products/semiconductor/ FGW30N120H Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abs

 0.1. Size:562K  fuji
fgw30n120hd.pdf pdf_icon

FGW30N120H

http //www.fujielectric.com/products/semiconductor/ FGW30N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Ab

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fgw30n60vd.pdf pdf_icon

FGW30N120H

http //www.fujielectric.com/products/semiconductor/ FGW30N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit

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