FGW50N60HD Todos los transistores

 

FGW50N60HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW50N60HD
   Tipo de transistor: IGBT + Diode
   Código de marcado: 50G60HD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 95 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 75 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Qgⓘ - Carga total de la puerta, typ: 305 nC
   Paquete / Cubierta: TO247
 
   - Selección ⓘ de transistores por parámetros

 

FGW50N60HD Datasheet (PDF)

 ..1. Size:560K  fuji
fgw50n60hd.pdf pdf_icon

FGW50N60HD

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 5.1. Size:565K  fuji
fgw50n60h.pdf pdf_icon

FGW50N60HD

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 5.2. Size:569K  fuji
fgw50n60hc.pdf pdf_icon

FGW50N60HD

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 6.1. Size:625K  fuji
fgw50n60vda.pdf pdf_icon

FGW50N60HD

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

Otros transistores... FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , IHW20N120R2 , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D .

 

 
Back to Top

 


FGW50N60HD
  FGW50N60HD
  FGW50N60HD
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT50N65UH | JJT50N65UE | JJT50N65LE | JJT50N65HE | JJT120N75SA | JJT10N65ST | JJT10N65SS | JJT10N65SGD | JJT10N65SCD | JJT10N65SC | DHG20T65D

 

 

 
Back to Top

 

Popular searches

irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460 | irfz44n mosfet

 


 
.