AP20G45EH Todos los transistores

 ..1. Size:69K  ape
 ap20g45eh.pdf

AP20G45EH/J Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Description VCES 450V ICP 130A G C E TO-252(H) * High Input Impedance * High Pick Current Capability C * 4.5V Gate Drive G * Strobe Flash Applications G C TO-251(J) E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltag

 ..2. Size:71K  ape
 ap20g45eh ap20g45ej.pdf

AP20G45EH/J Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Description VCES 450V ICP 130A G C E TO-252(H) * High Input Impedance * High Pick Current Capability C * 4.5V Gate Drive G * Strobe Flash Applications G C TO-251(J) E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltag

 6.1. Size:69K  ape
 ap20g45ej.pdf

AP20G45EH/J Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Description VCES 450V ICP 130A G C E TO-252(H) * High Input Impedance * High Pick Current Capability C * 4.5V Gate Drive G * Strobe Flash Applications G C TO-251(J) E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltag

 9.1. Size:59K  ape
 ap20gt60p-hf.pdf

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi

 9.2. Size:95K  ape
 ap20gt60asp-hf.pdf

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 19A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

 9.3. Size:60K  ape
 ap20gt60sw.pdf

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V

 9.4. Size:93K  ape
 ap20gt60i.pdf

AP20GT60I RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

 9.5. Size:92K  ape
 ap20gt60w.pdf

AP20GT60W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A C G RoHS Compliant Product G C TO-3P E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltag

 9.6. Size:95K  ape
 ap20gt60asi-hf.pdf

AP20GT60ASI-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 12A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter

 9.7. Size:2572K  cn apm
 ap20g04nf.pdf

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R

 9.8. Size:1874K  cn apm
 ap20g03nf.pdf

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R

 9.9. Size:1518K  cn apm
 ap20g06gd.pdf

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R

 9.10. Size:1819K  cn apm
 ap20g03gd.pdf

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R

 9.11. Size:2093K  cn apm
 ap20g04gd.pdf

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS D R