HGT1S20N60C3 Todos los transistores

 

HGT1S20N60C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S20N60C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 164 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 24 nS

Encapsulados: TO262

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HGT1S20N60C3 datasheet

 0.2. Size:112K  1
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf pdf_icon

HGT1S20N60C3

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These

 0.3. Size:140K  fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf pdf_icon

HGT1S20N60C3

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

Otros transistores... HGT1S14N36G3VLS , HGT1S14N36G3VLS9A , HGT1S1N120BNDS , HGT1S1N120CNDS , HGT1S20N35G3VL , HGT1S20N35G3VLS , HGT1S20N35G3VLS9A , HGT1S20N60B3S , KGF75N65KDF , HGT1S20N60C3R , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN .

 

 

 


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