APT15GN120SDQ1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT15GN120SDQ1G  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 195 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 9 nS

Coesⓘ - Capacitancia de salida, typ: 65 pF

Encapsulados: TO247 TO263

  📄📄 Copiar 

 Búsqueda de reemplazo de APT15GN120SDQ1G IGBT

- Selecciónⓘ de transistores por parámetros

 

APT15GN120SDQ1G datasheet

 0.1. Size:160K  microsemi
 apt15gn120sdq1g.pdf pdf_icon

APT15GN120SDQ1G

TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling

 4.1. Size:192K  apt
 apt15gn120kg.pdf pdf_icon

APT15GN120SDQ1G

TYPICAL PERFORMANCE CURVES APT15GN120K(G) 1200V APT15GN120K APT15GN120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-220 conduction loss. Easy paralleling is a result of very tight parameter dist

 4.2. Size:224K  apt
 apt15gn120bdq1g.pdf pdf_icon

APT15GN120SDQ1G

TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter dis

MOSTRAR MÁS

Otros transistores... AOB15B60D, IRGSL8B60K, AOK15B60D, APT20GT60BRDQ1G, APT20GT60BRG, APT20GT60KRG, RJH1CF5RDPQ-80, APT15GN120BDQ1G, GT30F133, APT20GF120BRDQ1G, APT20GF120SRDQ1G, APT20GF120BRG, APT20GF120KRG, APT30GN60BG, APT30GN60KG, AP30G120W, AP30G100W