APT30GN60BG Todos los transistores

 

APT30GN60BG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30GN60BG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 203 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 37 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de APT30GN60BG IGBT

   - Selección ⓘ de transistores por parámetros

 

Principales características: APT30GN60BG

 ..1. Size:395K  apt
 apt30gn60bg.pdf pdf_icon

APT30GN60BG

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 4.1. Size:429K  apt
 apt30gn60bdq2g.pdf pdf_icon

APT30GN60BG

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

 5.1. Size:687K  apt
 apt30gn60sg apt30gp60bg.pdf pdf_icon

APT30GN60BG

APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT pr

 5.2. Size:140K  microsemi
 apt30gn60kg.pdf pdf_icon

APT30GN60BG

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

MOSTRAR MÁS

Otros transistores... APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , IHW40T60 , APT30GN60KG , AP30G120W , AP30G100W , AOK30B60D1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW .

 

 
Back to Top

 


 
.