AP30G120SW Todos los transistores

 

AP30G120SW IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30G120SW

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 208 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO247

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AP30G120SW datasheet

 ..1. Size:97K  ape
 ap30g120sw.pdf pdf_icon

AP30G120SW

AP30G120SW Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=3.0V@IC=30A C CO-PAK, IGBT with FRD G TO-3P G RoHS Compliant C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

 6.1. Size:99K  ape
 ap30g120bsw-hf.pdf pdf_icon

AP30G120SW

AP30G120BSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

 6.2. Size:95K  ape
 ap30g120w.pdf pdf_icon

AP30G120SW

AP30G120W Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1100V High speed switching IC 30A Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G Industry Standard TO-3P Package G RoHS Compliant TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1100 V

 6.3. Size:98K  ape
 ap30g120asw.pdf pdf_icon

AP30G120SW

AP30G120ASW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

MOSTRAR MÁS

Otros transistores... APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , AOK30B60D1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , RJH60F5DPQ-A0 , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 , APT28GA60K , TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G .

 

 

 


 
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