AP30G120SW Todos los transistores

 

AP30G120SW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30G120SW
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 208 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 120 pF
   Qgⓘ - Carga total de la puerta, typ: 55 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

AP30G120SW Datasheet (PDF)

 ..1. Size:97K  ape
 ap30g120sw.pdf pdf_icon

AP30G120SW

AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 6.1. Size:99K  ape
 ap30g120bsw-hf.pdf pdf_icon

AP30G120SW

AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

 6.2. Size:95K  ape
 ap30g120w.pdf pdf_icon

AP30G120SW

AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V

 6.3. Size:98K  ape
 ap30g120asw.pdf pdf_icon

AP30G120SW

AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

MOSTRAR MÁS

Otros transistores... APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , AOK30B60D1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , FGH75T65UPD , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 , APT28GA60K , TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G .

History: APT15GP60BDLG | APT15GP60BDQ1G | IRGP4066D-E | RJH60T4DPQ-A0 | CI15T60 | SGB15N60HS | RJP63F3DPP-M0

 

 
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