APT28GA60BD15 Todos los transistores

 

APT28GA60BD15 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT28GA60BD15
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 222 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 8 nS
   Coesⓘ - Capacitancia de salida, typ: 214 pF
   Qgⓘ - Carga total de la puerta, typ: 90 nC
   Paquete / Cubierta: TO247

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APT28GA60BD15 Datasheet (PDF)

 ..1. Size:242K  microsemi
apt28ga60bd15.pdf

APT28GA60BD15
APT28GA60BD15

APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 5.1. Size:211K  microsemi
apt28ga60k.pdf

APT28GA60BD15
APT28GA60BD15

APT28GA60K 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT28GA60KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

 9.1. Size:207K  microsemi
apt28m120b2 apt28m120l.pdf

APT28GA60BD15
APT28GA60BD15

APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 9.2. Size:213K  microsemi
apt28f60b apt28f60s.pdf

APT28GA60BD15
APT28GA60BD15

APT28F60B APT28F60S 600V, 30A, 0.22 Max, trr 230nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

Otros transistores... APT30GN60KG , AP30G120W , AP30G100W , AOK30B60D1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , IRG4PC50UD , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 , APT28GA60K , TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G , APT15GT120BRG .

 

 
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