APT27GA90SD15 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT27GA90SD15  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 223 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 8 nS

Coesⓘ - Capacitancia de salida, typ: 145 pF

Encapsulados: TO268AB

  📄📄 Copiar 

 Búsqueda de reemplazo de APT27GA90SD15 IGBT

- Selecciónⓘ de transistores por parámetros

 

APT27GA90SD15 datasheet

 ..1. Size:258K  microsemi
apt27ga90sd15.pdf pdf_icon

APT27GA90SD15

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

 5.1. Size:249K  microsemi
apt27ga90bd15.pdf pdf_icon

APT27GA90SD15

APT27GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 5.2. Size:118K  microsemi
apt27ga90k.pdf pdf_icon

APT27GA90SD15

APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220 through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90K VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

 9.1. Size:313K  diodes
apt27z.pdf pdf_icon

APT27GA90SD15

A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case TO92 BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals Matte Tin Finish; Solderable per MIL-S

Otros transistores... AOK30B60D1, AP30G120ASW, AP30G120BSW-HF, AP30G120CSW-HF, AP30G120SW, APT28GA60BD15, APT27GA90BD15, APT27GA90K, GT30F133, APT28GA60K, TGAN20N135FD, TGAN20N120FD, APT15GT120BRDQ1G, APT15GT120BRG, APT15GT120SRG, APT13GP120BG, APT13GP120KG