TGAN20N135FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN20N135FD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 223 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de TGAN20N135FD - IGBT
TGAN20N135FD Datasheet (PDF)
tgan20n135fd.pdf
TGAN20N135FDField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN20N135F
tgan20n135f3d.pdf
TGAN20N135F3DField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN2
tgan20n150fd.pdf
TGAN20N150FDField Stop Trench IGBTFeaturesTO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl
tgan20n120fd.pdf
TGAN20N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN20N120FD TO-3PN TGAN20N120FD RoHSAbso
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2