TGAN20N135FD Todos los transistores

 

TGAN20N135FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN20N135FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 223
   Tensión máxima colector-emisor |Vce|, V: 1350
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 40
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
   Tensión máxima de puerta-umbral |VGE(th)|, V: 8
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 30
   Capacitancia de salida (Cc), typ, pF: 55
   Carga total de la puerta (Qg), typ, nC: 120
   Paquete / Cubierta: TO3PN

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TGAN20N135FD Datasheet (PDF)

 ..1. Size:947K  trinnotech
tgan20n135fd.pdf

TGAN20N135FD TGAN20N135FD

TGAN20N135FDField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN20N135F

 3.1. Size:968K  trinnotech
tgan20n135f3d.pdf

TGAN20N135FD TGAN20N135FD

TGAN20N135F3DField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN2

 6.1. Size:950K  trinnotech
tgan20n150fd.pdf

TGAN20N135FD TGAN20N135FD

TGAN20N150FDField Stop Trench IGBTFeaturesTO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

 6.2. Size:1118K  trinnotech
tgan20n120fd.pdf

TGAN20N135FD TGAN20N135FD

TGAN20N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN20N120FD TO-3PN TGAN20N120FD RoHSAbso

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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