HGT1S2N120CNDS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1S2N120CNDS
Tipo de transistor: IGBT + Diode
Código de marcado: 2N120CND
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.7(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 30 nC
Paquete / Cubierta: TO263
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HGT1S2N120CNDS Datasheet (PDF)
hgtp2n120cnd hgt1s2n120cnds.pdf
HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers
hgtp2n120cn hgt1s2n120cn.pdf
March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf
HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at
hgtp2n120bnd hgt1s2n120bnds.pdf
HGTP2N120BND, HGT1S2N120BNDSData Sheet January 2000 File Number 4698.212A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oCThe HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oCmembers o
Otros transistores... HGT1S20N60B3S , HGT1S20N60C3 , HGT1S20N60C3R , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , RJP6065DPM , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS .
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