APT15GP90BG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT15GP90BG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Qgⓘ - Carga total de la puerta, typ: 60 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
APT15GP90BG Datasheet (PDF)
apt15gp90bg.pdf

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p
apt15gp90b.pdf

TYPICAL PERFORMANCE CURVES APT15GP90BAPT15GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation
apt15gp90bdf1.pdf

TYPICAL PERFORMANCE CURVES APT15GP90BDF1APT15GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz
apt15gp90bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
Otros transistores... APT15GT120BRDQ1G , APT15GT120BRG , APT15GT120SRG , APT13GP120BG , APT13GP120KG , APT15GP60BDLG , APT15GP60BDQ1G , APT15GP60KG , IRG7S313U , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 .
History: TGAN20N120FD | SGTP5T60SD1S
History: TGAN20N120FD | SGTP5T60SD1S



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