BSM100GAL120DLCK - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM100GAL120DLCK
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 800 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 1000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM100GAL120DLCK Datasheet (PDF)
bsm100gal120dlck.pdf

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120
bsm100gal120dn2.pdf

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
bsm100gar120dn2.pdf

BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
Otros transistores... APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , IHW20N120R3 , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD .
History: IRG6I330U | APT100GT120JU2 | HGTG27N60C3DR | APT44GA60S | AOD5B65M1
History: IRG6I330U | APT100GT120JU2 | HGTG27N60C3DR | APT44GA60S | AOD5B65M1



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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