APT43GA90B Todos los transistores

 

APT43GA90B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT43GA90B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 337 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 43 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Coesⓘ - Capacitancia de salida, typ: 227 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

APT43GA90B Datasheet (PDF)

 ..1. Size:202K  microsemi
apt43ga90b apt43ga90s.pdf pdf_icon

APT43GA90B

APT43GA90B APT43GA90S 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of Cres/Cie

 0.1. Size:237K  microsemi
apt43ga90bd30.pdf pdf_icon

APT43GA90B

APT43GA90BD30 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT43GA90Bgate charge and a greatly reduced ratio of Cres/Cies provide excellent n

 5.1. Size:241K  microsemi
apt43ga90sd30.pdf pdf_icon

APT43GA90B

APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT(B)D3PAKPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CG EVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of

 9.1. Size:211K  microsemi
apt43f60b2 apt43f60l.pdf pdf_icon

APT43GA90B

APT43F60B2 APT43F60L 600V, 45A, 0.15 Max, trr 270nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

Otros transistores... APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , IRG7R313U , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 .

History: IXA12IF1200TC | SGW50N60HS | STGW20NB60H | DGC50F65M2 | IXGX82N120B3 | KGT30N120NDA | RJH30H2DPK-M0

 

 
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