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APT25GT120BRG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT25GT120BRG

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 347

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 3.9

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 25

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 27

Capacitancia de salida (Cc), pF: 250

Empaquetado / Estuche: TO247

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APT25GT120BRG Datasheet (PDF)

1.1. apt25gt120brg.pdf Size:144K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GT120BR(G) 1200V APT25GT120BR APT25GT120BRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. G C E • Low Forward Voltage Drop •

4.1. apt25gn120b.pdf Size:184K _apt

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120B 1200V Utilizing the latest Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

4.2. apt25gp90bdf1.pdf Size:205K _apt

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C • Low Conduction Loss • 100 kHz

4.3. apt25gp120b.pdf Size:92K _apt

APT25GT120BRG
APT25GT120BRG

APT25GP120B 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alt

4.4. apt25gp90b.pdf Size:175K _apt

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E • Low Conduction Loss • 100 kHz operat

4.5. apt25gp120bdf1.pdf Size:190K _apt

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology TO-247 and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the

4.6. apt25gp120bg.pdf Size:93K _igbt_a

APT25GT120BRG
APT25GT120BRG

APT25GP120B 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alt

4.7. apt25gn120bg.pdf Size:195K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

4.8. apt25gn120b2dq2g.pdf Size:220K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s (B2) have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max® results in superior VCE(on) performance. Easy paralleling resu

4.9. apt25gn120sg.pdf Size:195K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

4.10. apt25gp90bg.pdf Size:188K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E • Low Conduction Loss • 100 kHz operat

4.11. apt25gp90bdq1g.pdf Size:441K _igbt_a

APT25GT120BRG
APT25GT120BRG

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

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