APT54GA60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT54GA60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 416 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 54 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Encapsulados: TO247
Búsqueda de reemplazo de APT54GA60B IGBT
- Selección ⓘ de transistores por parámetros
APT54GA60B datasheet
apt54ga60b apt54ga60s.pdf
APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved APT54GA60S through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro
apt54ga60bd30.pdf
APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of Cres/
apt54ga60sd30.pdf
APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of Cres/
Otros transistores... APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , YGW40N65F1 , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG .
History: TSG60N100CE | APT40GP60J | APT40GP90B | APT150GN60J
History: TSG60N100CE | APT40GP60J | APT40GP90B | APT150GN60J
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
d880 transistor | 2sc1845 | p60nf06 | 2sa1837 | ksc1845 transistor | irf630 datasheet | mpsa13 equivalent | c5198