APT30GN60SG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30GN60SG
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 463
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 49
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 18
Capacitancia de salida (Cc), typ, pF: 295
Carga total de la puerta (Qg), typ, nC: 90
Paquete / Cubierta: TO268AB
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APT30GN60SG Datasheet (PDF)
apt30gn60sg apt30gp60bg.pdf
APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr
apt30gn60bg.pdf
TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
apt30gn60bdq2g.pdf
TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib
apt30gn60kg.pdf
TYPICAL PERFORMANCE CURVESAPT30GN60K(G) 600V APT30GN60KAPT30GN60KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a
Otros transistores... MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , SGT60N60FD1P7 , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL .
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