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APT64GA90B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT64GA90B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 500

Tensión colector-emisor (Vce): 900

Voltaje de saturación colector-emisor (Vce sat): 2.2

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 64

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 26

Capacitancia de salida (Cc), pF: 318

Empaquetado / Estuche: TO247

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APT64GA90B Datasheet (PDF)

1.1. apt64ga90b2d30.pdf Size:226K _igbt_a

APT64GA90B
APT64GA90B

 APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

1.2. apt64ga90ld30.pdf Size:226K _igbt_a

APT64GA90B
APT64GA90B

 APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

1.3. apt64ga90b.pdf Size:199K _igbt_a

APT64GA90B
APT64GA90B

 APT64GA90B APT64GA90S 900V High Speed PT IGBT APT64GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

1.4. apt64ga90s.pdf Size:199K _igbt_a

APT64GA90B
APT64GA90B

 APT64GA90B APT64GA90S 900V High Speed PT IGBT APT64GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Otros transistores... APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , FII50-12E , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG .

 


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Introduzca al menos 1 números o letras