APT75GN60BG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT75GN60BG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 536 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 93 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 48 nS
Coesⓘ - Capacitancia de salida, typ: 370 pF
Qgⓘ - Carga total de la puerta, typ: 485 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
APT75GN60BG Datasheet (PDF)
apt75gn60bg.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
apt75gn60bdq2g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result
apt75gn60ldq3g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parameter
apt75gn60sdq2g.pdf

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result
Otros transistores... APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , XNF15N60T , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor | 2sc1384 | mj21196g | irfb4115