APT150GN60J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT150GN60J
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 536 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 123 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 110 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Qgⓘ - Carga total de la puerta, typ: 970 nC
Paquete / Cubierta: SOT227
- Selección de transistores por parámetros
APT150GN60J Datasheet (PDF)
apt150gn60j.pdf

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt150gn60jdq4.pdf

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
apt150gn60b2g.pdf

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-
apt150gn60ldq4g.pdf

600V APT150GN60LDQ4(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia
Otros transistores... APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , IRG4PC40W , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G .
History: DGW30N65BTH | PPNHZ52F120B | IXER20N120D1 | APT46GA90JD40
History: DGW30N65BTH | PPNHZ52F120B | IXER20N120D1 | APT46GA90JD40



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