APT50GN120B2G Todos los transistores

 

APT50GN120B2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50GN120B2G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 543 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 210 pF

Encapsulados: TO247

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APT50GN120B2G datasheet

 ..1. Size:190K  apt
apt50gn120b2g.pdf pdf_icon

APT50GN120B2G

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior VCE(on) performance. Easy paralleling results from very t

 2.1. Size:187K  apt
apt50gn120b2.pdf pdf_icon

APT50GN120B2G

TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Max parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

 4.1. Size:226K  apt
apt50gn120l2dq2g.pdf pdf_icon

APT50GN120B2G

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result

 7.1. Size:292K  apt
apt50gn60bg.pdf pdf_icon

APT50GN120B2G

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

Otros transistores... APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , XNF15N60T , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL .

 

 

 


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