APT75GP120JDQ3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT75GP120JDQ3
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 543 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 57 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 460 pF
Qgⓘ - Carga total de la puerta, typ: 320 nC
Paquete / Cubierta: SOT227
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APT75GP120JDQ3 Datasheet (PDF)
apt75gp120jdq3.pdf
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592
apt75gp120jdf3.pdf
TYPICAL PERFORMANCE CURVES APT75GP120JDF3APT75GP120JDF31200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"ISOTOPswitchmode power supplies. Low Conduction Loss
apt75gp120j.pdf
APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG
apt75gp120b2.pdf
APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char
apt75gp120b2g.pdf
APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char
Otros transistores... APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , FGH30S130P , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG .
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