APT80GA60S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT80GA60S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 580 pF
Encapsulados: TO268AB
Búsqueda de reemplazo de APT80GA60S IGBT
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APT80GA60S datasheet
apt80ga60s.pdf
APT80GA60B APT80GA60S 600V High Speed PT IGBT APT80GA60B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt80ga60ld40.pdf
APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies
apt80ga60b.pdf
APT80GA60B APT80GA60S 600V High Speed PT IGBT APT80GA60B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt80ga90ld40.pdf
APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunit
Otros transistores... APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , IRGP4063 , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 , APT80GA90S , APT50GP60BG , APT50GP60SG , MPMB75B120RH .
History: APT35GA90BD15 | APT64GA90B2D30 | VS-GA100NA60UP | APT43GA90B
History: APT35GA90BD15 | APT64GA90B2D30 | VS-GA100NA60UP | APT43GA90B
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