APT50GT120B2RDQ2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50GT120B2RDQ2G
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 3.7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 53 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Qgⓘ - Carga total de la puerta, typ: 340 nC
Paquete / Cubierta: TO247
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APT50GT120B2RDQ2G Datasheet (PDF)
apt50gt120b2rdq2g.pdf
APT50GT120B2RDQ2G1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Switching to 50KHz
apt50gt120b2rdlg.pdf
TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200VAPT50GT120B2RDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-fers superior ruggedness and ultrafast switching speed.Typical Applicatio
apt50gt120b2rg.pdf
APT50GT120B2R(G) APT50GT120LR(G)1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Sw
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