HGT1S5N120CNDS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1S5N120CNDS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 167 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Paquete / Cubierta: TO263
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HGT1S5N120CNDS Datasheet (PDF)
hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde
hgtp5n120cn hgt1s5n120cns.pdf

HGTP5N120CN, HGT1S5N120CNSData Sheet December 200125A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150
hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
hgtp5n120bn hgt1s5n120bns.pdf

HGTP5N120BN, HGT1S5N120BNSData Sheet January 2000 File Number 4599.221A, 1200V, NPT Series N-Channel IGBTs FeaturesThe HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oCNon-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capabilitymembers of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ
Otros transistores... HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , SGT40N60NPFDPN , HGT1S5N120CNS , HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS .
History: MMG150S120B6TN | APTGF25X120E2 | SGT20T60SD1T | GT80J101 | BLG40T120FUH-F | APTLGF210U120T
History: MMG150S120B6TN | APTGF25X120E2 | SGT20T60SD1T | GT80J101 | BLG40T120FUH-F | APTLGF210U120T



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