APT65GP60L2DQ2G Todos los transistores

 

APT65GP60L2DQ2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT65GP60L2DQ2G
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 833 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 96 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 55 nS
   Coesⓘ - Capacitancia de salida, typ: 580 pF
   Qgⓘ - Carga total de la puerta, typ: 210 nC
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

APT65GP60L2DQ2G Datasheet (PDF)

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APT65GP60L2DQ2G

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 2.1. Size:197K  apt
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APT65GP60L2DQ2G

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2APT65GP60L2DF2600V POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC Low Conduction Loss 100 kH

 5.1. Size:96K  apt
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APT65GP60L2DQ2G

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate

 5.2. Size:478K  apt
apt65gp60jdq2.pdf pdf_icon

APT65GP60L2DQ2G

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGA16N60B2 | IXSH24N60A | MPMB50B120RH

 

 
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History: IXGA16N60B2 | IXSH24N60A | MPMB50B120RH

APT65GP60L2DQ2G
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